document number: 81122 for tec hnical questions, contact: optochipsupport@vishay.com www.vishay.com rev. 1.4, 23-mar-11 1 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 silicon pin photodiode t1110p6 vishay semiconductors description t1110p6 is a high speed and high sensitive pin photodiode chip with 7.5 mm 2 sensitive area detecting visible and near infrared radiation. anode is the bond pad on top. features ? package type: chip ? package form: single chip ? dimensions (l x w x h in mm): 2.97 x 2.97 x 0.28 ? radiant sensitive area (in mm 2 ): 7.5 ? high photo sensitivity ? high radiant sensitivity ? suitable for visible and near infrared radiation ? fast response times ? angle of half sensitivity: ? = 60 ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec applications ? high speed photo detector general information the datasheet is based on vishay optoel ectronics sample testing under certain pr edetermined and assumed conditions, and is provided for illustration purpose only. customers are encouraged to perform testing in actu al proposed packaged and used conditions. vishay optoelectronics die products are tested us ing vishay optoelectronics ba sed quality assurance procedures and are manufactured using vishay optoelectronics established processes. estimates such as those described and set forth in this datasheet for semiconductor die will vary depending on a number of packagin g, handling, use, and ot her factors. therefore sold die may not perform on an equivale nt basis to standard package products. note ? test conditions see table basic characteristics note ? moq: minimum order quantity 21591 product summary component i ra (a) ? (deg) ? 0.1 (nm) t1110p6 55 60 430 to 1100 ordering information ordering code packaging remarks package form T1110P6-SD-F wafer sawn on foil with disco frame moq: 8000 pcs chip absolute maximum ratings (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit reverse voltage v r 60 v junction temperature t j 100 c operating temperature range t amb - 40 to + 100 c storage temperature range t stg1 - 40 to + 100 c storage temperature range on foil t stg2 - 40 to + 50 c
www.vishay.com for technica l questions, contact: optochipsupport@vishay.com document number: 81122 2 rev. 1.4, 23-mar-11 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 t1110p6 vishay semiconductors silicon pin photodiode note ? the measurements are based on samples of die which are mounted on a to-header without resin coating basic characteristics (t amb = 25 c, unless otherwise specified) fig. 1 - reverse dark current vs. ambient temperature fig. 2 - relative reverse light cu rrent vs. ambient temperature basic characteristics (t amb = 25 c, unless otherwise specified) parameter test condition symbol min. typ. max. unit breakdown voltage i r = 100 a, e = 0 v (br) 60 v forward voltage i f = 50 ma v f 11.3v reverse dark current v r = 10 v, e = 0 i ro 25na diode capacitance v r = 0 v, f = 1 mhz, e = 0 c d 70 pf v r = 3 v, f = 1 mhz, e = 0 c d 25 pf open circuit voltage e e = 1 mw/cm 2 , ? = 950 nm v oc 350 mv temperature coefficient of v oc e e = 1 mw/cm 2 , ? = 950 nm tk voc - 2.6 mv/k short circuit current e e = 1 mw/cm 2 , ? = 950 nm i k 50 a temperature coefficient of i k e e = 1 mw/cm 2 , ? = 950 nm tk ik 0.1 %/k reverse light current e e = 1 mw/cm 2 , ? = 950 nm, v r = 5 v i ra 55 a angle of half sensitivity ? 60 deg wavelength of peak sensitivity ? p 940 nm range of spectral bandwidth ? 0.1 430 to 1100 nm noise equivalent power v r = 10 v, ? = 950 nm nep 4 x 10 -14 w/ ? hz rise time v r = 10 v, r l = 1 k ? , ? = 820 nm t r 100 ns fall time v r = 10 v, r l = 1 k ? , ? = 820 nm t f 100 ns 20 40 60 80 1 10 100 1000 100 94 8403 v r = 10 v t amb - ambient temperature (c) i ro - reverse dark current (na) 0.6 0.8 1.0 1.2 1.4 94 8409 v r =5v = 950 nm 100 80 60 40 20 0 i - re lative reverse light current t - ambient temperature (c) amb ra rel
document number: 81122 for tec hnical questions, contact: optochipsupport@vishay.com www.vishay.com rev. 1.4, 23-mar-11 3 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 t1110p6 silicon pin photodiode vishay semiconductors fig. 3 - reverse light current vs. irradiance fig. 4 - reverse light current vs. reverse voltage fig. 5 - diode capacitance vs. reverse voltage fig. 6 - relative spectral sensitivity vs. wavelength note ? all chips are checked in accordance with the vishay semi conductor, specification of visual inspection fvov6870. the visual inspection shall be made in accordance with the spe cification of visual inspection as referenced. the visual inspe ction of chip backside is performe d with stereo microscope with incide nt light and 40x to 80x magnification. the quality inspection (final visual inspection) is performed by production. an additional visual inspection step as special re lease procedure by qm is not installed. 0.01 0.1 1 0.1 1 10 100 1000 i ra - reverse light current (a) e e - irradiance (mw/cm 2 ) 10 12787 v r = 5 v = 950 nm 0.1 1 10 1 10 100 v r - reverse voltage (v) 100 12788 i ra - reverse light current (a) 1 mw/cm 2 0.5 mw/cm 2 0.2 mw/cm 2 0.1 mw/cm 2 0.05 mw/cm 2 = 950 nm 0 20 40 60 80 948407 e = 0 f = 1 mhz c d - diode capacitance (pf) v r - reverse voltage (v) 0.1 100 110 350 550 750 950 0 0.2 0.4 0.6 0.8 1.0 1150 94 8420 - wavelength (nm) s( ) rel - relative spectral sensitivit y mechanical dimensions parameter symbol min. typ. max. unit length of chip edge (x-direction) l x 2.97 mm length of chip edge (y-direction) l y 2.97 mm sensitive area a s 2.74 x 2.74 mm 2 die height h 0.28 mm bond pad anode a x b 0.2 x 0.2 mm 2 additional information (t amb = 25 c, unless otherwise specified) frontside metallization, anode aluminum backside metallization, cathode niv-ag dicing sawing die bonding technology epoxy bonding
www.vishay.com for technica l questions, contact: optochipsupport@vishay.com document number: 81122 4 rev. 1.4, 23-mar-11 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 t1110p6 vishay semiconductors silicon pin photodiode handling and storage conditions ? the hermetically sealed shipment lots shall be opened in te mperature and moisture controlled cleanroom environment only. it is mandatory to follow the rules for disposition of ma terial that can be hazardous for humans and environment. ? product must be handled only at esd safe workstations. st andard esd precautions and safe work environments are as defined in mil-hdbk-263. ? singulated die are not to be handled wi th tweezers. a vacuum wand with non me tallic esd protected ti p should be used. packing chips are fixed on adhesive foil. upon request the foils can be mounted on plastic frame or disco frame. for shipment, the wafers are arranged to stacks and hermetically sealed in pl astic bags to ensure protection against environmental influence (humidity and contamination). use for recycling reliable operators only. we can help getting in touch with your ne arest sales office. by agreement we will ta ke back packing material, if it is sorted. you will have to bear the costs of tran sport. we will invoice you for any costs incurre d for packing material that is re turned unsorted or which we are not obliged to accept.
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